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| 2SK2641-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings TO-3P FAP-2S Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 500 10 40 35 10 229 100 +150 -55 to +150 Unit V A A V A mJ W C C < *2 Tch=150C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=4.20mH, Vcc=50V Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V VGS=0V VGS=35V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=10A VGS=10V RGS=10 L=100 H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C 10 1.1 450 5.5 1.65 Tch=25C Tch=125C Min. 500 3.5 Typ. Max. Units V V A mA nA S pF 2.5 4.0 4.5 10 500 0.2 1.0 10 100 0.73 0.90 5.0 950 1450 180 270 80 120 25 40 70 110 70 110 45 70 ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.25 35.0 Units C/W C/W 1 2SK2641-01 Characteristics Power Dissipation PD=f(Tc) FUJI POWER MOSFET Safe operating area ID=f(VDS):D=0.01,Tc=25C 120 100 1 t=0.01 s 1s 10 80 DC 10s PD [W] ID [A] 60 100s 40 10 0 1ms t 20 T D= t T 10ms 100ms 0 0 50 100 150 10 -1 10 0 10 1 10 2 10 3 Tc [ C] o VDS [V] Typical output characteristics ID=f(VDS):80s Pulse test,Tch=25C 25 Typical transfer characteristic ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C 20 VGS=20V 10 1 10V 15 8V ID [A] 10 7V 5 6.5V 6V 0 0 5 10 15 20 25 30 5.5V 5V 35 ID [A] 10 0 10 -1 10 -2 0 1 2 3 4 5 6 7 8 9 10 VDS [V] VGS [V] Typical forward transconductance gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C Typical drain-source on-state resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 5 VGS= 5V 5.5V 6V 4 6.5V 7V 10 1 RDS(on) [ ] 3 gfs [s] 10 0 2 8V 10V 20V 1 10 -1 10 -1 10 0 10 1 0 0 5 10 15 20 ID [A] ID [A] 2 2SK2641-01 FUJI POWER MOSFET Drain-source on-state resistance RDS(on)=f(Tch):ID=5A,VGS=10V 3.0 6.0 Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS 2.5 5.0 max. 2.0 4.0 typ. min. RDS(on) [ ] max. 1.5 typ. 1.0 VGS(th) [V] 3.0 2.0 0.5 1.0 0.0 -50 0 50 100 150 o 0.0 -50 0 50 100 o 150 Tch [ C] Tch [ C] Typical gate charge characteristic VGS=f(Qg):ID=10A,Tch=25C 400 Vcc=400V 350 300 250 200 150 100 100V 50 0 40 10n Typical capacitances C=f(VDS):VGS=0V,f=1MHz V 00 =1 cc 50V V2 0V 40 35 30 1n Ciss VDS [V] 250V 25 VGS [V] 20 15 C [F] Coss 100p 10 5 0 140 10p 10 Crss 0 20 40 60 80 100 120 -2 10 -1 10 0 10 1 10 2 Qg [nC] VDS [V] Forward characteristic of reverse of diode IF=f(VSD):80s Pulse test,VGS=0V 250 Avalanche energy derating Eas=f(starting Tch):Vcc=50V,IAV=10A 10 1 200 Tch=25 C typ. o 150 IF [A] 10 0 Eas [mJ] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 100 10 -1 50 10 -2 0.0 0 0 50 o 100 150 VSD [V] Starting Tch [C] 3 2SK2641-01 FUJI POWER MOSFET 10 1 Transient thermal impedande Zthch=f(t) parameter:D=t/T 10 D=0.5 0 Zthch-c [K/W] 0.2 0.1 -1 10 0.05 0.02 0.01 0 10 -4 t D= T t T 10 -5 10 -2 10 -3 10 -2 10 -1 10 0 10 1 t [s] 4 |
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